murd820ct thru MURD860CT pb free plating product murd820ct/murd830ct/murd840ct/MURD860CT 8.0 amperes surface mount dual common cathode ultra fast recovery rectifiers ? 1995 thinki semiconductor co., ltd. http://www.thinkisemi.com.tw/ page 1/2 pb rev.08t features ? ? ? ? ? ? ? ? ? ? ? unit : inch (mm) to-252/dpak latest gpp epi p/g technology good soft recovery characteristics ideally suited for automatic assembly low forward voltage high surge current capability low leakage current applications freewheeling, snubber, clamp inversion welder pfc plating power supply ultrasonic cleaner and welder converter & chopper ups/led smps/hid ? ? .225 ( 5.7 ) .209 ( 5.3 ) .106 ( 2.7 ) .090 ( 2.3 ) .09 ( 2.3 ) .09 ( 2.3 ) .032 ( 0.8 ) .012 ( 0.3 ) .02 ( .5 ) .071 ( 1.8 ) .051 ( 1.3 ) .040 ( 1.0 ) min. 3 2 1 4 .264 ( 6.7 ) .248 ( 6.3 ) .216 ( 5.5 ) .200 ( 5.1 ) .063 ( 1.6 ) .047 ( 1.2 ) .098 ( 2.5 ) .082 ( 2.1 ) .024 ( 0.6 ) .016 ( 0.4 ) positive negative common cathode common anode doubler tandem polarity series tandem polarity suffix "ctr" suffix "ctd" suffix "cts" suffix "ct" 4 4 4 4 maximum ratings and el ectrical characteristics @t a =25c unless otherwise specified single phase, half wave, 60hz, resist ive or inductive load. for capaciti ve load, derate current by 20%. characteristic symbol murd820ct unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 200 300 400 600 v rms reverse voltage v r(rms) 140 210 280 420 v average rectified output current total device @t c = 100c per diode i o 8.0 4.0 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 100 a forward voltage per diode @i f fm peak reverse current @t c = 25c at rated dc blocking voltage @t c = 100c i rm 5.0 100 a reverse recovery time (note 1) t rr 35 50 ns typical junction capacitance (note 2) c j 70 50 pf thermal resistance junction to ambient (note 3) thermal resistance junction to lead (note 3) r ja r jc 80 6.5 c/w operating and storage temperature range t j, t stg -55 to +150 c note: 1. measured with i f = 0.5a, i r = 1.0a, i rr = 0.25a. 2. measured at 1.0 mhz and applied reverse voltage of 4.0 v dc. 3. mounted on pcb with minimum recommended pad sizes per diode. murd830ct murd840ct MURD860CT = 4.0 a v 0.98 1.30 1.70 v
? 1995 thinki semiconductor co., ltd. http://www.thinkisemi.com.tw/ page 2/2 rev.08t 0 t c , case temperature (c) fig. 1 forward current derating curve 15 30 45 60 75 90 105 120 135 150 0 1.6 3.2 4.8 6.4 8.0 i (av) , average forward rectified current (a) resistive or inductive load 0 v f , instantaneous forward voltage (v) fig. 2 typical forward characteristics 0.4 0.8 1.2 1.6 2.0 0.1 1.0 10 100 i f , instantaneous forward current (a) 1 number of cycles at 60hz fig. 3 forward surge current derating curve 10 100 0 20 40 60 80 100 i fsm , peak forward surge current (a) 0 percent of rated peak reverse voltage (%) fig. 4 typical reverse characteristics 20 40 60 80 100 120 140 0.01 0.1 1.0 10 100 1000 i r , instantaneous reverse current (a) single half-sine-wave jedec method 0.1 v r , dc reverse voltage (v) fig. 6 typical junction capacitance 1 10 100 0 c j , junction capacitance (pf) f = 1mhz 40 80 120 160 200 0 i f(av) , average forward current (a) fig. 5 forward power dissipation 8 12 16 p d , power dissipation (w) 0 4 8 12 16 20 4 20 dc, t j = 150c murd830ct murd840ct MURD860CT murd820ct t c = 25c t c = 125c t c = 100c murd820ct murd830ct/murd840ct/MURD860CT murd830ct murd840ct MURD860CT murd820ct (t a =25c unless otherwise noted) ratings and characteristics curves murd820ct thru MURD860CT
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